Real-time measurement of Si wafer thickness at CMP or backside grinding
Non-contact and non-destructive measurement available
Original analytical algorithm for thickness measurement (patent granted)
Real-time measurement of Si wafer thickness
3 types of optional stage - Rθ, XY, RθXY
High precision and high speed measurement
Compatible with a spare unit of 300mm EFEM port
6F, 41, Seongnam-daero 925beon-gil, Bundang-gu, Seongnam-si, Gyeonggi-do, 13496, Republic of Korea
Copyright ⓒ 2020 Otsuka Electronics Korea | 한국오츠카전자 All rights reserved.